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Electrical / Optical Characteristics
Values are at T A = 25°C unless specified otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
INPUT (Emitter)
V F
I R
λ PE
Forward Voltage
Reverse Leakage Current
Peak Emission Wavelength
I F = 20 mA
V R = 5 V
I F = 20 mA
940
1.7
100
V
μ A
nm
OUTPUT (Sensor)
BV CEO
BV ECO
I D
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Dark Current
I C = 1 mA
I E = 0.1 mA
V CE = 10 V, I F = 0 mA
30
5
100
V
V
nA
COUPLED
IC(ON)
IC(ON)
V CE(SAT)
QRD1113 Collector Current
QRD1114 Collector Current
Collector Emitter Saturation Voltage
I F = 20 mA, V CE = 5 V,
D = 0.050 inch (5, 7)
I F = 40 mA, I C = 100 μ A,
D = 0.050 inch (5, 7)
0.300
1
0.4
mA
mA
V
I CX
t r
t f
Cross Talk
Rise Time
Fall time
I F = 20 mA, V CE =5 V,
E E = 0 (6)
V CE = 5 V, R L = 100 Ω ,
I C(ON) = 5 mA
0.2
10
50
10.0
μ A
μ s
μ s
Notes:
5. D is the distance from the sensor face to the reflective surface.
6. Crosstalk (I CK ) is the collector current measured with the indicated current on the input diode and with no reflective
surface.
7. Measured using Eastman Kodak natural white test card with 90% diffused reflecting as a reflecting surface.
? 2005 Fairchild Semiconductor Corporation
QRD1113 / QRD1114 Rev. 1.2.0
3
www.fairchildsemi.com
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